DocumentCode :
2699871
Title :
Non-destructive current-ramp dielectric breakdown (IRDB) for fast BEOL reliability monitoring
Author :
Yiang, Kok-Yong ; Francis, Rick ; Marathe, Amit ; Aubel, Oliver
Author_Institution :
Technol. & Reliability Dev., GLOBALFOUNDRIES, Inc., Sunnyvale, CA, USA
fYear :
2010
fDate :
2-6 May 2010
Firstpage :
117
Lastpage :
119
Abstract :
A fast current-ramp dielectric breakdown (IRDB) method is developed for critical dielectric reliability assessment. Unlike the conventional voltage-ramp method, the nondestructive nature of IRDB still allows wafers to be shipped for revenue after reliability monitoring. This is an important criterion for reduced-cost, high-volume manufacturing.
Keywords :
electric breakdown; semiconductor device reliability; BEOL reliability monitoring; IRDB method; nondestructive current ramp dielectric breakdown; voltage ramp method; Breakdown voltage; Current measurement; Dielectric breakdown; Dielectric measurements; Electric breakdown; Leakage current; Manufacturing; Monitoring; Power dissipation; Voltage measurement; Dielectric Breakdown; IRDB; VRDB;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4244-5430-3
Type :
conf
DOI :
10.1109/IRPS.2010.5488842
Filename :
5488842
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2699871
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