Title :
The new mechanism for obtaining of the steep nonlinearities in the modern semiconductor structure
Author :
Korol, A.M. ; Tretyak, O.V. ; Sheka, D.I.
Author_Institution :
Ukrainian State Univ. for Food Technol., Kiev, Ukraine
Abstract :
The current-voltage characteristics of the semiconductor structure: the Schottky barrier (SB) incorporating the double barrier resonant-tunnelling structure, are evaluated and analysed. Since the SE can block (unblock) the resonant-tunnelling currents effectively enough the both very sharp and strong enhancement of the current is observed for the forward bias. For the backbiased structure considered, the region of the negative differential resistance takes place. The shape of the current-voltage curves depends on the parameters of the problem essentially
Keywords :
Schottky barriers; negative resistance; resonant tunnelling; Schottky barrier; current-voltage characteristics; double barrier resonant tunnelling structure; negative differential resistance; nonlinearity; semiconductor structure; Current-voltage characteristics; Electron emission; Food technology; Instruments; Resonance; Resonant tunneling devices; Schottky barriers; Semiconductor diodes; Shape; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889542
