Title :
High-resistivity silicon p-i-n diodes for detection of ionising radiation
Author :
Slysz, W. ; Ryc, L. ; Wegrzecki, M.
Author_Institution :
Inst. of Electron. Technol., Warsaw
Abstract :
Silicon p-i-n photodiodes for measuring nuclear radiation, with a large surface area (5×5 mm2), a thick (380 μm) active layer and a very thin dead layer (0.13 μm), have been fabricated by diffusion from a boron doped silicon layer (BDS). The photodiodes have been tested using α-particles from 241Am and X-rays from laser plasmas
Keywords :
X-ray detection; alpha-particle detection; p-i-n photodiodes; silicon radiation detectors; α-particles; 0.13 mum; 380 mum; 241Am; Si; Si p-i-n photodiodes; Si:B layer; X-rays; diffusion; high-resistivity p-i-n diodes; ionising radiation detection; large surface area; laser plasmas; nuclear radiation; p+-ν-n+ structure; thick active layer; very thin dead layer; Area measurement; Boron; Nuclear measurements; P-i-n diodes; PIN photodiodes; Plasma x-ray sources; Silicon; Testing; Thickness measurement; X-ray lasers;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889545
