Title :
Growth and characterization of RuO2 films prepared by reactive unbalanced magnetron sputtering
Author :
Búc, D. ; Music, D. ; Helmersson, U.
Author_Institution :
Dept. of Phys., Linkoping Univ., Sweden
Abstract :
We prepared RuO2 thin films on Si substrates by reactive unbalanced magnetron sputtering in Ar+O2 mixtures using a planar round ruthenium target of 50 mm diameter. Films were sputtered in the constant voltage mode at a power of 100 W, total pressures in the range from 0.2 to 10 Pa and partial pressure of O2 from 0 to 80% at temperatures up to 600°C and negative bias voltage. We investigated the crystallographic nature of films by X-ray diffraction. EDX measurements confirmed the presence of Ru and O in films, RBS measurements revealed changes of composition with bias voltage. It was found that there were changes of structure, electrical and mechanical properties with the oxygen flow ratio, temperature and substrate bias voltage. Nanoindentation measurements were utilised for evaluation of the hardness and reduced modulus of films
Keywords :
Rutherford backscattering; X-ray chemical analysis; X-ray diffraction; elastic moduli; electrical resistivity; hardness; indentation; insulating thin films; ruthenium compounds; sputter deposition; sputtered coatings; 0.2 to 10 Pa; 100 W; 50 mm; 600 C; EDX measurements; O2 partial pressure; RBS measurements; RuO2; RuO2 films; Si; Si substrates; X-ray diffraction; composition changes; constant voltage mode; crystallographic nature; electrical properties; hardness; mechanical properties; nanoindentation measurements; negative bias voltage; oxygen flow ratio; planar round ruthenium target; reactive unbalanced magnetron sputtering; reduced modulus; substrate bias voltage; total pressure; Electrical resistance measurement; Heating; Land surface temperature; Physics; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Voltage; X-ray diffraction;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Conference_Location :
Smolenice
Print_ISBN :
0-7803-5939-9
DOI :
10.1109/ASDAM.2000.889546
