Title :
Failure analysis of resistive switching devices
Author_Institution :
Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
Abstract :
Cycling failures for resistive switching devices are discussed based on array statistics measured on Cu2O metal-insulator-metal (MIM) devices. Four types of failures can be identified under rigorous testing conditions. The rate of these failures can be reduced by optimizing operation methods, which has significant impact on cycling endurance and yield. Failures related to data loss may have their origin in material stability.
Keywords :
MIM devices; copper compounds; failure analysis; statistics; Cu2O; MIM device; array statistics; cycling endurance; failure analysis; material stability; metal-insulator-metal device; operation method optimization; resistive switching devices; CMOS process; Failure analysis; Hafnium oxide; MIM devices; Nonvolatile memory; Optimization methods; Stability; Statistical analysis; Testing; Voltage; cycling endurance; resistive switching; retention; switching failure;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-5430-3
DOI :
10.1109/IRPS.2010.5488848
