Understanding noise measurements in MOSFETs: the role of traps structural relaxation

Author

Veksler, D. ; Bersuker, G. ; Rumyantsev, S. ; Shur, M. ; Park, H. ; Young, C. ; Lim, K.Y. ; Taylor, W. ; Jammy, R.

Author_Institution

SEMATECH, Austin, TX, USA

fYear

2010

fDate

2-6 May 2010

Firstpage

73

Lastpage

79

Abstract

The presented theoretical analysis of random telegraph signal (RTS) and 1/f noise data provides consistent interpretation of the measurement results allowing trap characteristics to be extracted and the atomic structure of oxide traps to be identified. We emphasize the critical role of the lattice structural relaxation associated with charge trapping/detrapping, which represents one of the major factors controlling electron capture/emission times.

Keywords

MOSFET; electron capture; noise measurement; telegraphy; MOSFET; charge trapping-detrapping; electron capture-emission times; noise measurements; oxide traps; random telegraph signal; traps structural relaxation; Atomic measurements; Data mining; Electron traps; Lattices; MOSFETs; Noise measurement; Radioactive decay; Signal analysis; Signal processing; Telegraphy; Electrical noise; MOSFET characterization; configurational relaxation of traps; random telegraph signal;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488850

Filename

5488850