DocumentCode :
2700046
Title :
Technology, properties and limitations of state-of-the-art InAlN/GaN HEMTs
Author :
Kuzmík, J. ; Carlin, J.-F. ; Kostopoulos, T. ; Konstantinidis, G. ; Georgakilas, A. ; Pogany, Dionyz
Volume :
1
fYear :
2005
fDate :
June 20-22, 2005
Firstpage :
57
Lastpage :
58
Keywords :
Annealing; Contact resistance; Electron mobility; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Physics; Schottky barriers; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553053
Filename :
1553053
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2700046
