Title :
GaInNAs/GaAs quantum wells: Advantages for SOAs
Author :
Rorison, J.M. ; Pozo, J. ; Wong, H.C. ; Qiu, Y.N. ; Vogiatis, N. ; Alexandopolos, D. ; Konttinen, J. ; Saarinen, M. ; Jouhti, T. ; Pessa, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ.
Abstract :
GaInNAs/GaAs quantum wells are a relatively new material system for telecom/data com application. Generally it has been thought that the material offers an improved temperature performance and lattice matching to GaAs both significant advances. However studies of the material show that it has more parameters to control: in particular controlling the N distribution within the QW and the nature of the N states- single, pair states or cluster states allows tunability of the band gap, conduction band effective mass and quantum-dot-like localised states. These features offer a number of new device applications which will be discussed in this talk
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; localised states; optical communication equipment; optical materials; semiconductor optical amplifiers; semiconductor quantum wells; wide band gap semiconductors; GaInNAs-GaAs; GaInNAs/GaAs quantum wells; SOA; band gap; conduction band effective mass; quantum-dot-like localised states; Conducting materials; Data engineering; Effective mass; Gallium arsenide; Lattices; Photonic band gap; Telecommunication control; Temperature; Weight control;
Conference_Titel :
Transparent Optical Networks, 2006 International Conference on
Conference_Location :
Nottingham
Print_ISBN :
1-4244-0235-2
Electronic_ISBN :
1-4244-0236-0
DOI :
10.1109/ICTON.2006.248360
