Title :
A comparative study of functional 16 K bipolar PROM circuits fabricated on bonded, oxide isolated and junction isolated substrates
Author :
Church, Michael D.
Author_Institution :
Harris Semicond., Melbourne, FL, USA
Abstract :
Summary form only given. Fully functional 16 K bipolar PROMS fabricated on bonded, oxide-isolated and junction-isolated substrates are discussed. The differences in device parameters, particularly those related to leakage current, are related to the unique properties of each substrate type. Circuit performance improvements were attained by the reduction of the collector-to-substrate capacitance of the bipolar transistors
Keywords :
PROM; bipolar integrated circuits; integrated circuit technology; integrated memory circuits; leakage currents; 16 kbit; bipolar transistors; bonded substrate; collector-to-substrate capacitance; device parameters; functional bipolar PROM circuits; junction isolated substrates; leakage current; oxide isolated substrate; BiCMOS integrated circuits; Capacitance; Implants; Insulation; Isolation technology; Leakage current; PROM; Silicon; Substrates; Wafer bonding;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69820
