DocumentCode
2700432
Title
A comparative study of functional 16 K bipolar PROM circuits fabricated on bonded, oxide isolated and junction isolated substrates
Author
Church, Michael D.
Author_Institution
Harris Semicond., Melbourne, FL, USA
fYear
1989
fDate
3-5 Oct 1989
Firstpage
175
Lastpage
176
Abstract
Summary form only given. Fully functional 16 K bipolar PROMS fabricated on bonded, oxide-isolated and junction-isolated substrates are discussed. The differences in device parameters, particularly those related to leakage current, are related to the unique properties of each substrate type. Circuit performance improvements were attained by the reduction of the collector-to-substrate capacitance of the bipolar transistors
Keywords
PROM; bipolar integrated circuits; integrated circuit technology; integrated memory circuits; leakage currents; 16 kbit; bipolar transistors; bonded substrate; collector-to-substrate capacitance; device parameters; functional bipolar PROM circuits; junction isolated substrates; leakage current; oxide isolated substrate; BiCMOS integrated circuits; Capacitance; Implants; Insulation; Isolation technology; Leakage current; PROM; Silicon; Substrates; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location
Stateline, NV
Type
conf
DOI
10.1109/SOI.1989.69820
Filename
69820
Link To Document