Title :
Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS
Author :
Lee, W.C. ; Chang, P. ; Lee, Y.J. ; Huang, M.L. ; Lin, T.D. ; Chu, L.K. ; Chang, Y.C. ; Chiu, H.C. ; Chang, Y.H. ; Lin, C.A. ; Chang, W.H. ; Chu, R.L. ; Chiang, T.H. ; Wu, Y.D. ; Kwo, J. ; Hong, M.
Author_Institution :
Dept. Mat. Sci. Eng., Natl Tsing Hua U, Hsinchu, Taiwan
Abstract :
We have achieved high device performance in self-aligned inversion-channel InGaAs MOSFETs, as well as a CET of <; 1 nm, a Dit ≤ 1011 eV-1cm-2, and high-temperature thermal stability withstanding >850°C RTA in GGO and a CET of <; 1 nm in ALD-HfO2 on InGaAs. Remarkable device performances in self-aligned, inversion-channel Ge MOSFET using GGO without any interfacial passivation layers (IPLs), and inversion-channel and accumulation type GaN MOSFET´s with high k´s as gate dielectrics have also been attained. Interfacial characteristics including energy band parameters were studied using x-ray photoelectron spectroscopy (XPS).
Keywords :
III-V semiconductors; MOSFET; X-ray photoelectron spectra; high-k dielectric thin films; indium compounds; inversion layers; nanoelectronics; silicon; thermal stability; X-ray photoelectron spectroscopy; exotic semiconductors; high k dielectrics; high-temperature thermal stability; interfacial passivation layers; nanoelectronics; self-aligned inversion-channel MOSFET; CMOS technology; Dielectric devices; Gallium nitride; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide; MOSFETs; Passivation; Spectroscopy; Thermal stability;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488900