Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS

We have achieved high device performance in self-aligned inversion-channel InGaAs MOSFETs, as well as a CET of <; 1 nm, a D_it ≤ 10¹¹ eV^-1cm^-2, and high-temperature thermal stability withstanding >850°C RTA in GGO and a CET of <; 1 nm in ALD-HfO₂ on InGaAs. Remarkable device performances in self-aligned, inversion-channel Ge MOSFET using GGO without any interfacial passivation layers (IPLs), and inversion-channel and accumulation type GaN MOSFET´s with high k´s as gate dielectrics have also been attained. Interfacial characteristics including energy band parameters were studied using x-ray photoelectron spectroscopy (XPS).