DocumentCode :
2700465
Title :
Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory
Author :
Zhu, Yan ; Zhao, Dengtao ; Li, Ruigang ; Liu, Jianlin
Author_Institution :
Dept. of Electr. Eng., California Univ., Riverside, CA
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
101
Lastpage :
102
Abstract :
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
Keywords :
dielectric materials; random-access storage; semiconductor materials; silicon; titanium compounds; TiSi2-Si; dielectric nanocrystals; hetero-nanocrystal nonvolatile memory; hetero-nanocrystals; metal dot; nanocrystal floating gate memory; semiconductor nanocrystals; Annealing; Capacitance; Hetero-nanocrystal memory; Nanocrystals; Nitrogen; Nonvolatile memory; Silicides; Titanium; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553075
Filename :
1553075
Link To Document :
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