DocumentCode
2700465
Title
Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory
Author
Zhu, Yan ; Zhao, Dengtao ; Li, Ruigang ; Liu, Jianlin
Author_Institution
Dept. of Electr. Eng., California Univ., Riverside, CA
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
101
Lastpage
102
Abstract
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
Keywords
dielectric materials; random-access storage; semiconductor materials; silicon; titanium compounds; TiSi2-Si; dielectric nanocrystals; hetero-nanocrystal nonvolatile memory; hetero-nanocrystals; metal dot; nanocrystal floating gate memory; semiconductor nanocrystals; Annealing; Capacitance; Hetero-nanocrystal memory; Nanocrystals; Nitrogen; Nonvolatile memory; Silicides; Titanium; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553075
Filename
1553075
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