Title :
Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory
Author :
Zhu, Yan ; Zhao, Dengtao ; Li, Ruigang ; Liu, Jianlin
Author_Institution :
Dept. of Electr. Eng., California Univ., Riverside, CA
Abstract :
After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
Keywords :
dielectric materials; random-access storage; semiconductor materials; silicon; titanium compounds; TiSi2-Si; dielectric nanocrystals; hetero-nanocrystal nonvolatile memory; hetero-nanocrystals; metal dot; nanocrystal floating gate memory; semiconductor nanocrystals; Annealing; Capacitance; Hetero-nanocrystal memory; Nanocrystals; Nitrogen; Nonvolatile memory; Silicides; Titanium; Tunneling; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553075