• DocumentCode
    2700465
  • Title

    Self-aligned TiSi/sub 2/Si hetero-nanocrystal nonvolatile memory

  • Author

    Zhu, Yan ; Zhao, Dengtao ; Li, Ruigang ; Liu, Jianlin

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Riverside, CA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    101
  • Lastpage
    102
  • Abstract
    After the proposal of nanocrystal floating gate memory by Tiwari, tremendous effort has been made to improve the device performance of a memory containing nanocrystal floating gate, including semiconductor nanocrystals (Si, Ge et al.), metal dot (W, Ni, Au, Pt, Ag et al.), dielectric nanocrystals (Al2O3, HfO2 and Si4N3 et al.) and Ge/Si hetero-nanocrystals. In this work, we will report for the first time titanium silicide/Si hetero-nanocrystal floating gate memory
  • Keywords
    dielectric materials; random-access storage; semiconductor materials; silicon; titanium compounds; TiSi2-Si; dielectric nanocrystals; hetero-nanocrystal nonvolatile memory; hetero-nanocrystals; metal dot; nanocrystal floating gate memory; semiconductor nanocrystals; Annealing; Capacitance; Hetero-nanocrystal memory; Nanocrystals; Nitrogen; Nonvolatile memory; Silicides; Titanium; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553075
  • Filename
    1553075