Title :
The prospects for 10 nm III-V CMOS
Author :
del Alamo, J.A. ; Kim, D.H.
Author_Institution :
Microsyst. Technol. Labs., MIT, Cambridge, MA, USA
Abstract :
The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; silicon; III-V CMOS technology; III-V compound semiconductors; Si; channel materials; electron transport property; size 10 nm; CMOS logic circuits; CMOS technology; Electrons; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MODFETs; MOSFETs; Power system reliability; Quantum capacitance;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488901
