Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM

In this work, the nanoscale Ti/HfO₂ based resistive memory with pillar structure was fabricated. The architecture of the pillar device shows the advantages of reduced parasitic capacitance effect and simple process flow. The effects of the passivated layer on the nanoscale RRAM are also studied. Reduction of the interaction between the memory device and the encapsulating layer plays an important role for the enlarging resistive switching window of the nanoscale RRAM. Finally, a nanoscale Ti/HfO₂ resistive memory with improved memory performance through an appropriate passivation layer was demonstrated.