Identification and application of current compliance failure phenomenon in RRAM device

A new current sweep measurement method is introduced to investigate the details of the set process. The electrode-dependent current compliance failure phenomenon is investigated in oxide-based resistive switching memory. The results indicate that the amount of conductive filaments formed in the oxide layer is the critical factor that influences the set behavior (sudden or slowly) and causes the compliance failure. The different switching behaviors measured by the current sweep mode could be used as a criterion for distinguishing the RRAM devices from the applications of 1D1R or multilevel storage.