Title :
Low current bipolar resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
Author :
Rahaman, S.Z. ; Maikap, S. ; Lin, C.-H. ; Tzeng, P.-J. ; Lee, H.Y. ; Wu, T.-Y. ; Chen, Y.S. ; Chen, F. ; Kao, M.-J. ; Tsai, M.-J.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Low current/voltage (1 nA/1.3V) operation of resistive switching memory device using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte has been investigated. This resistive memory device have a large resistance ratio of > 10 at 1 nA current compliance, good endurance of ~105 cycles, and good data retention with a current of 1 nA up to 2×103 seconds. The low resistance state decreases with increasing the programming current from 1 nA to 500 μA, which can be useful for future nanoscale MLC applications. A strong Cu metallic filament is investigated by monitoring the negative erase current (Ie).
Keywords :
copper; germanium compounds; random-access storage; solid electrolytes; Cu; Ge0.2Se0.8; current 1 nA; low current bipolar resistive switching memory; metallic filament; negative erase current; solid-electrolyte; voltage 1.3 V; Conducting materials; Electrodes; Electron traps; Electronics industry; Industrial electronics; Low voltage; Memory; Monitoring; Oxidation; Threshold voltage;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488915
