Title :
A thermally stable salicide process using N2 implantation into TiSi2
Author :
Nishiyama, A. ; Akasaka, Y. ; Ushiku, Y. ; Hishioka, K. ; Suizu, Y. ; Shiozaki, M.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
TiSi2 is an appropriate candidate for the self-aligned silicide (salicide) process. However, it degrades morphologically and the film sheet resistance increases during high-temperature annealing. A thermally stable salicide process using N2 implantation into TiSi2 has been developed in order to retard this phenomenon. The morphology of the TiSi2 film and the film sheet resistance were evaluated as a function of implanted N2 dose after high-temperature annealing. The sample which received the highest dose exhibited the best film morphology, while there is an optimum dose for maintaining the film sheet resistance at its maximum value. The dependence of sheet resistance on implanted N2 dose is discussed in terms of agglomeration, film composition, and implantation damage. A successful application to a submicron MOS transistor is presented
Keywords :
annealing; insulated gate field effect transistors; metallisation; nitrogen; titanium compounds; TiSi2:N2; agglomeration; film composition; film morphology; film sheet resistance; high-temperature annealing; implantation damage; self-aligned silicide; submicron MOS transistor; Annealing; Glass; MOSFETs; Morphology; Nitrogen; Semiconductor films; Temperature; Tin; Titanium; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127882
