DocumentCode :
2701026
Title :
An optimized high pressure tungsten process for VLSI interconnect and plug applications
Author :
Shenasa, Mohsen ; Davies, Tad
Author_Institution :
Nat. Semicond. Corp., Puyallup, WA, USA
fYear :
1990
fDate :
12-13 Jun 1990
Firstpage :
322
Lastpage :
324
Abstract :
A manufacturable blanket CVD-W process developed to satisfy the fill properties required for plug formation, as well as the bulk resistivity and reflectivity properties needed in order to use tungsten as first metal, is described. The optimized process provides low contact resistivity to both doped polycrystalline silicon and silicides. A discussion is presented of effects of process parameters (namely temperature, gas ratios, and flow rates) for a chemical vapor deposition of tungsten on the resultant film properties and contact resistance. It is shown that deposition temperature has the greatest effect. An inverse relationship is noted between contact resistance and temperature
Keywords :
CVD coatings; VLSI; contact resistance; electronic conduction in metallic thin films; metallisation; tungsten; VLSI interconnect; W; blanket CVD process; bulk resistivity; chemical vapor deposition; contact resistivity; fill properties; film properties; flow rates; gas ratios; inverse relationship; optimized process; plug applications; reflectivity properties; temperature; Conductivity; Contact resistance; Manufacturing processes; Plugs; Reflectivity; Silicides; Silicon; Temperature; Tungsten; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
Type :
conf
DOI :
10.1109/VMIC.1990.127885
Filename :
127885
Link To Document :
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