Study on simulation method of thermal stress and deformation in CCD composite dielectrics

Focused on the CCD composite dielectrics (Si₃N₄/SiO₂), the method of the thermal-mechanical coupling simulation was studied by three different ANSYS models including the whole model, the 1/4 model and the 2-D model in this paper. The thermal stress and deformation were calculated, and the reasonableness of the simulation method was validated, and the differences of these three models simulation results were also discussed. Based on analyzing the advantages and disadvantages of these three models, the adaptability conditions of three models were discussed. This study is useful to investigate the simulation method of thermal stress and deformation in the multi-layer film, especially whose thickness is much thinner than its other dimensions.