DocumentCode :
2701057
Title :
A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
Author :
Toh, Kai-yap ; Chuang, Ching-Te ; Wiedmann, Siegfried K. ; Chin, Ken
Author_Institution :
IBM, Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1990
fDate :
17-18 Sep 1990
Firstpage :
71
Lastpage :
74
Abstract :
The authors describe the circuit design techniques used to demonstrate the feasibility of achieving a high-speed bipolar split-emitter MTL SRAM with 256 Kb density using ECL (emitter coupled logic) peripheral circuits. A simulated access time of 1.9 ns is achieved at 6.3 W total chip power dissipation, which is below the packaging limit for the intended applications. The minimum simulated cycle time is 3 ns. These results are based on an 0.8-μm, 26-GHz fT, double-polysilicon self-aligned bipolar technology with calibrated NPN device models. To achieve this speed and power performance at 256 Kb density, several innovative circuit techniques are used, including an array architecture, an over-writing ECL logic circuit, an address decoder circuit with active pulldown, and bit-line discharge and restore schemes
Keywords :
SRAM chips; bipolar integrated circuits; emitter-coupled logic; integrated injection logic; 0.8 micron; 1.9 ns; 256 kbit; 26 GHz; 3 ns; 6.3 W; ECL peripheral circuits; access time; active pulldown; address decoder circuit; array architecture; bipolar SRAM; bipolar split-emitter MTL SRAM; bit line control; calibrated NPN device models; circuit design; double-polysilicon self-aligned bipolar technology; over-writing ECL logic circuit; simulated cycle time; total chip power dissipation; Circuit simulation; Circuit synthesis; Coupling circuits; Decoding; Logic arrays; Logic circuits; Logic design; Packaging; Power dissipation; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
Type :
conf
DOI :
10.1109/BIPOL.1990.171129
Filename :
171129
Link To Document :
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