On the 60 mV/dec @300 K limit for MOSFET subthreshold swing

The 60 mV/dec limit for subthreshold swing at 300 K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.