Title :
On the 60 mV/dec @300 K limit for MOSFET subthreshold swing
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
The 60 mV/dec limit for subthreshold swing at 300 K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.
Keywords :
MOSFET; semiconductor materials; MOSFET subthreshold swing; density-of-states; Clocks; Electrons; Gate leakage; Leakage current; MOSFET circuits; NIST; Physics; Power dissipation; Subthreshold current; Voltage;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488941
