Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Author

Hwang, Chih-Hong ; Li, Yiming

Author_Institution

Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

26-28 April 2010

Firstpage

74

Lastpage

75

Abstract

The work-function fluctuation (WKF) induced threshold voltage variability (σV_th) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σV_th are drawn. The analytical expression of WKF-induced σV_th can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.

Keywords

MOSFET; hafnium compounds; semiconductor device reliability; silicon compounds; titanium compounds; FinFET devices; Monte Carlo simulation approach; TiN-HfSiON; device geometry; fluctuation suppression approaches; grain size; nanodevice reliability; nanoscale transistors; size 16 nm; work-function fluctuation; Equations; FinFETs; Fluctuations; Geometry; Grain size; Inorganic materials; Laboratories; Silicon; Threshold voltage; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488942

Filename

5488942