Title :
Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack
Author :
Hwang, Chih-Hong ; Li, Yiming
Author_Institution :
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.
Keywords :
MOSFET; hafnium compounds; semiconductor device reliability; silicon compounds; titanium compounds; FinFET devices; Monte Carlo simulation approach; TiN-HfSiON; device geometry; fluctuation suppression approaches; grain size; nanodevice reliability; nanoscale transistors; size 16 nm; work-function fluctuation; Equations; FinFETs; Fluctuations; Geometry; Grain size; Inorganic materials; Laboratories; Silicon; Threshold voltage; Tin;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488942
