DocumentCode :
2701192
Title :
Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs
Author :
Dora, Y. ; Suh, C. ; Chakraborty, A. ; Heikman, S. ; Chandrasekarana, S. ; Mehrotraa, V. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
191
Lastpage :
192
Abstract :
In this report we present the switching measurements on large area AlGaN/GaN HEMT devices with high breakdown voltage achieved with the help of multiple field plates. AlGaN/GaN high electron mobility transistors have shown potential advantages over Si and SiC based transistors for high power switching. The very high electron mobility in the AlGaN/GaN HEMT system combined with the high density of polarization induced 2D electron concentration yield a very low on-resistance and high switching frequency. Also the high band gap energy of AlGaN/GaN system results in a high critical electric field. Hence it is possible to have high voltage power switches capable of operating at high frequencies (~100MHz). However there are some difficulties, which have prevented the achievement of very high breakdown voltages at high frequency operation
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; switching; wide band gap semiconductors; 2D electron concentration; AlGaN-GaN; HEMT; high breakdown voltage; high electron mobility; multiple field plates; switching characteristics; Aluminum gallium nitride; Area measurement; Electron mobility; Frequency; Gallium nitride; HEMTs; MODFETs; Polarization; Silicon carbide; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553115
Filename :
1553115
Link To Document :
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