Title :
Impact of uniaxial strain on the gate leakage currents of PD-SOI MOSFETs and ring oscillators with ultra-thin gate dielectric
Author :
Zhao, Wei ; Seabaugh, Alan ; Winstead, Brian ; Jovanovic, Dejan ; Adams, Vance
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
Abstract :
In this paper, we report the first investigation of the influence of uniaxial tensile strain on the gate tunneling current in advanced partially-depleted silicon-on-insulator (PD-SOI) MOSFETs. We have also studied, for the first time, the impact of uniaxial strain on the static leakage current of ring oscillators (RO) fabricated in this technology
Keywords :
MOSFET; dielectric materials; oscillators; silicon-on-insulator; PD-SOI MOSFET; gate leakage currents; ring oscillators; ultra thin gate dielectric; uniaxial strain; Capacitive sensors; Dielectrics; Gate leakage; Leakage current; MOSFET circuits; Ring oscillators; Tensile strain; Tunneling; Uniaxial strain; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553119
