Title :
Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories
Author :
Molas, G. ; Bocquet, M. ; Colonna, J.P. ; Vidal, V. ; Kies, R. ; Grampeix, H. ; Martin, F. ; Papon, A.M. ; Dansas, H. ; Brianceau, P. ; Licitra, C. ; Barnes, J.P. ; Pananakakis, G. ; Ghibaudo, G. ; De Salvo, B.
Author_Institution :
CEA-LETI MINATEC, Grenoble, France
Abstract :
In this work we present the integration of Band Engineered TANOS-like memories using HfSiON in the tunnel stack to boost the programming efficiency and improve cycling. An accurate correlation analysis between the gate-stack material physical properties and the memory performances is presented. In particular, the importance of the nitridation step of HfSiON on the memory retention characteristics at high temperature is suggested.
Keywords :
alumina; correlation methods; elemental semiconductors; hafnium compounds; integrated circuit reliability; random-access storage; silicon; silicon compounds; tantalum compounds; HfSiON; TANOS memory reliability; TaN-Al2O3-Si3N4-SiO2-Si; band engineered TANOS-like memory reliability; correlation analysis; gate-stack material physical property; layered HfSiON-based tunnel stacks; memory retention characteristics; voltage reduction; Decision support systems; Voltage;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488949
