Sequential sputter deposition of titanium nitride and aluminum

Author

Giboa, H. ; Mosely, Rod ; Talieh, Homayoun ; Guo, Xin S.

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1990

fDate

12-13 Jun 1990

Firstpage

338

Lastpage

341

Abstract

A sequential deposition process (without air exposure or postdeposition anneal) in a multichamber UHV magnetron sputter deposition system is described. The TiN film has low resistivity (40 μΩ-cm), low stress (0.23×10⁹ dyne/cm²), and excellent diffusion barrier properties; it is stable after a 600°C, 30-min anneal. For nonoptimum films, a RF bias is shown to enhance the TiN barrier property. Oxygen addition during deposition increases film resistivity. Air exposure forms a titanium oxide layer in the Al-TiN interface, reducing the diffusion of titanium from TiN into aluminum

Keywords

aluminium; chemical interdiffusion; electronic conduction in metallic thin films; metallisation; sputtered coatings; titanium compounds; 600 degC; Al-TiN; RF bias; air exposure; annealing; diffusion barrier properties; multichamber UHV magnetron; resistivity; sequential deposition process; sputter deposition; stress; Aluminum; Annealing; Compressive stress; Conductivity; Nitrogen; Silicon; Sputtering; Tin; Titanium; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1990.127890

Filename

127890