Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations

Author

Larcher, Luca ; Padovani, Andrea ; Della Marca, Vincenzo ; Pavan, Paolo ; Bertacchini, Alessandro

Author_Institution

DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy

fYear

2010

fDate

26-28 April 2010

Firstpage

52

Lastpage

53

Abstract

Alumina is a key material for developing innovative Charge-Trapping Non-Volatile Memory (CT-NVM) devices. Al₂O₃ is used to implement the top dielectric in TANOS devices, and it has been proposed as trapping layer and to engineer the tunnel dielectric. Despite the large use of this material, the quantitative investigation of defect features still lacks. In this scenario, the purpose of this work is to investigate the physics of electron/hole trapping/detrapping mechanisms in Al₂O₃. Combining I-V and C-V measurements with a physical model we derive the energy levels of electron/hole traps and the location of electron/hole charge. The influence of electron/hole alumina traps on TANOS operations and reliability is investigated.

Keywords

alumina; electron traps; hole traps; random-access storage; Al₂O₃; CT-NVM devices; TANOS memory operations; charge-trapping nonvolatile memory; electron-hole alumina traps; trapping-detrapping mechanisms; tunnel dielectrics; Capacitance-voltage characteristics; Charge carrier processes; Charge measurement; Current measurement; Dielectric devices; Dielectric materials; Electron traps; Energy measurement; Nonvolatile memory; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488951

Filename

5488951