DocumentCode :
2701373
Title :
Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers
Author :
Holub, M. ; Shin, J. ; Chakrabarti, S. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
213
Lastpage :
214
Abstract :
In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures
Keywords :
spin polarised transport; surface emitting lasers; -0.25 micron; 80 to 105 K; InGaAs-GaAs; LED; elliptically polarized modes; ferromagnetic semiconductor; hole spins; quantum dot active regions; quantum well vertical-cavity surface-emitting lasers; semiconductor lasers; spin injection; spin transport; spin-VCSEL; spin-aligner layers; Laser modes; Light emitting diodes; Polarization; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553125
Filename :
1553125
Link To Document :
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