Title :
Tunnel oxide degradation in TANOS devices and its origin
Author :
Park, H. ; Bersuker, G. ; Jo, M. ; Veksler, D. ; Lim, K.Y. ; Gilmer, D. ; Goel, N. ; Kang, C.Y. ; Young, C. ; Chang, M. ; Hwang, H. ; Tseng, H.-H. ; Kirsch, P.D. ; Jammy, R.
Abstract :
Tunnel oxide degradation in TANOS devices and its origins were investigated in terms of program, erase, and endurance device operation modes. It was found that the erase operation may cause significant tunnel oxide degradation, while the degradation due to program operation is negligible. In the erase and endurance modes, tunnel oxide degradation is primarily controlled by the process of electron ejection from the SiN trapping layer to the substrate.
Keywords :
aluminium compounds; field effect transistors; silicon compounds; tantalum compounds; tunnelling; TANOS device; TaN-Al2O3-Si3N4-SiO2; electron ejection process; endurance device operation modes; endurance modes; erase operation; nFET device; substrates; trapping layer; tunnel oxide degradation; Degradation; Doping; Electron traps; Noise generators; Noise measurement; Performance evaluation; Pulse generation; Pulse measurements; Silicon compounds; Testing;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488954
