Impacts of multiple-gate configuration on characteristics of poly-Si nanowire SONOS devices

In this study, we have proposed a simple but novel way to fabricate poly-Si NW-SONOS devices. With a slight modification in the fabrication procedure, three types of devices having various gate configurations (SG, ΩG, and GAA) were successfully fabricated and characterized. The experimental results unambiguously show that, owing to the superior gate controllability over NW channels, much improved transfer characteristics are achieved with the GAA devices as compared with the other types of devices. Moreover, GAA devices also exhibit the best memory characteristics among all splits, highlighting the potential of such scheme for future SONOS applications.