• DocumentCode
    270143
  • Title

    A Method to Design SEC-DED-DAEC Codes With Optimized Decoding

  • Author

    Reviriego, Pedro ; Martínez, Jorge ; Pontarelli, Salvatore ; Maestro, Juan Antonio

  • Author_Institution
    Univ. Antonio de Nebrija, Madrid, Spain
  • Volume
    14
  • Issue
    3
  • fYear
    2014
  • fDate
    Sept. 2014
  • Firstpage
    884
  • Lastpage
    889
  • Abstract
    Single error correction-double error detection-double adjacent error correction (SEC-DED-DAEC) codes have been proposed to protect SRAM devices from multiple cell upsets (MCUs). The correction of double adjacent errors ensures that the most common types of MCUs are corrected. At the same time, SEC-DED-DAEC codes require the same number of parity check bits as traditional SEC-DED codes. The main overhead associated with SEC-DED-DAEC codes is the increase in decoding complexity that can impact access time and circuit power and area. In this paper, a method to design SEC-DED-DAEC codes with optimized decoding is presented and evaluated. The proposed scheme starts by setting some constraints on the parity check matrix of the codes. Those constraints are then used to simplify the decoding. The proposed scheme has been implemented and evaluated for different word-lengths. The results show that, for data words of 32 bits, the scheme can be implemented with the same number of parity check bits as SEC-DED codes. For 16 and 64 bits words, an additional parity check bit is required, making the scheme less attractive. With the proposed method, the decoders can be optimized for area or speed. Both implementations are evaluated and compared with existing SEC-DED-DAEC decoders. The results show that the proposed decoders reduce significantly the circuit area, power, and delay.
  • Keywords
    SRAM chips; decoding; error correction codes; parity check codes; MCU; SEC-DED-DAEC codes; SEC-DED-DAEC decoders; SRAM devices; decoding complexity; double adjacent error correction codes; double error detection codes; multiple cell upsets; optimized decoding; parity check bits; parity check matrix; single error correction codes; storage capacity 16 bit; storage capacity 32 bit; storage capacity 64 bit; Complexity theory; Decoding; Delays; Error correction codes; Logic gates; Materials reliability; Parity check codes; Multiple Cell Upsets (MCUs); SEC-DAEC codes; SRAM memories; error correction codes;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2014.2332364
  • Filename
    6853326