Title :
A 30 nm gate-all-around poly-Si nano wire thin-film transistor
Author :
Lee, Chen-Ming ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, gate-all-around (GAA) poly-Si nano wire (NW) thin film transistors (TFTs) with record physical gate length of 30 nm and driving current >100 μA/μm are demonstrated. The cross section of the NW channel is as small as 35 nm × 8 nm. The tight GAA and NW structure enhances the gate potential control ability effectively, therefore, excellent short channel and narrow width behaviors can be obtained. These results reveal the possibility of three-dimensional integrated circuits.
Keywords :
elemental semiconductors; nanoelectronics; nanowires; silicon; thin film transistors; three-dimensional integrated circuits; NW channel cross section; NW structure; Si; gate potential control; gate-all-around polySi nanowire thin-film transistor; narrow width behaviors; size 30 nm; three-dimensional integrated circuits; Amorphous materials; Crystallization; Fabrication; Integrated circuit technology; Schottky barriers; Solids; Thin film transistors; Three-dimensional integrated circuits; Wire; Wireless sensor networks;
Conference_Titel :
VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-5063-3
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2010.5488964
