A 30 nm gate-all-around poly-Si nano wire thin-film transistor

Author

Lee, Chen-Ming ; Tsui, Bing-Yue

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

26-28 April 2010

Firstpage

28

Lastpage

29

Abstract

In this work, gate-all-around (GAA) poly-Si nano wire (NW) thin film transistors (TFTs) with record physical gate length of 30 nm and driving current >100 μA/μm are demonstrated. The cross section of the NW channel is as small as 35 nm × 8 nm. The tight GAA and NW structure enhances the gate potential control ability effectively, therefore, excellent short channel and narrow width behaviors can be obtained. These results reveal the possibility of three-dimensional integrated circuits.

Keywords

elemental semiconductors; nanoelectronics; nanowires; silicon; thin film transistors; three-dimensional integrated circuits; NW channel cross section; NW structure; Si; gate potential control; gate-all-around polySi nanowire thin-film transistor; narrow width behaviors; size 30 nm; three-dimensional integrated circuits; Amorphous materials; Crystallization; Fabrication; Integrated circuit technology; Schottky barriers; Solids; Thin film transistors; Three-dimensional integrated circuits; Wire; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488964

Filename

5488964