A complementary high current gain transistor for use in a CMOS compatible technology

Author

Verdonckt-Vandebroek, Sophie ; Woo, Jason C S ; Wong, S. Simon

Author_Institution

Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1990

fDate

17-18 Sep 1990

Firstpage

82

Lastpage

85

Abstract

The authors present a BJT (bipolar junction transistor) which is fabricated using a bulk CMOS technology. The device is essentially a MOSFET in which the gate and the well are internally connected to form the base of a lateral BJT. Complementary NPN and PNP BJTs with a current gain higher than 1000 are presented. Because of the moderate cutoff frequency (i.e., f_T<5 GHz), the proposed BJT will mainly be used in BiCMOS processes for medium-speed, mostly CMOS, analog/digital applications

Keywords

BIMOS integrated circuits; bipolar transistors; integrated circuit technology; 5 GHz; BiCMOS processes; CMOS compatible technology; MOSFET; NPN BJT; PNP BJTs; bipolar junction transistor; complementary high current gain transistor; current gain; cutoff frequency; lateral BJT; BiCMOS integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Implants; Interface states; Joining processes; MOSFET circuits; Ohmic contacts; Quasi-doping;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1990.171132

Filename

171132