Title :
Study of Ga2O3 thin film gas sensors
Author :
Trinchi, A. ; Wlodarski, W. ; Li, Y.X.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMTT Univ., Melbourne, Vic., Australia
Abstract :
In this paper we present the gas sensing performance of pure, doped and Pt modified Ga2O3 thin films prepared by the sold-gel process. The oxygen gas sensing performance of the binary compound Ga2O3 is compared with that of pure Ga2O3 and ZnO. The Ga2O3-ZnO binary compound sensor showed preferred gas sensing in the temperature range of 450 to 550°C and outperformed the pure Ga2O3 and ZnO sensors for every oxygen gas concentration tested. Furthermore, the stoichiometry of the semiconducting Ga2O3 has been confirmed by X-ray photoelectron spectroscopy (XPS). For H2 measurements, a 70nm layer of Pt was deposited on top of the Ga2O3 to enhance the response and a comparison of the device with and without this layer is also presented. It was found that the addition of the Pt layer decreased the H2 response and recovery times by over 65%.
Keywords :
X-ray photoelectron spectra; coating techniques; gallium compounds; gas sensors; nanotechnology; platinum; stoichiometry; thin film devices; zinc compounds; 450 to 550 C; 70 nm; Ga2O3; Ga2O3 thin film gas sensors; Ga2O3-ZnO binary compound sensor; H2; H2 measurement; H2 response; Pt; Pt layer; Pt modified Ga2O3 thin films; X-ray photoelectron spectroscopy; oxygen gas concentration; oxygen gas sensing performance; recovery time; sold-gel process; stoichiometry; Annealing; Gas detectors; Hydrogen; III-V semiconductor materials; Magnetic materials; Semiconductor thin films; Surface morphology; Temperature sensors; Thick films; Thin film sensors;
Conference_Titel :
Sensors, 2003. Proceedings of IEEE
Print_ISBN :
0-7803-8133-5
DOI :
10.1109/ICSENS.2003.1278913
