DocumentCode

2701600

Title

Channel material optimization for the ultimate planar and nanowire mosfets: a theoretical exploration

Author

Wang, Jing ; Lundstrom, Mark

Volume

1

fYear

2005

fDate

June 20-22, 2005

Firstpage

241

Lastpage

242

Keywords

Degradation; Effective mass; FETs; III-V semiconductor materials; Logic devices; MOSFETs; Modems; Quantum capacitance; Quantum cascade lasers; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553139

Filename

1553139