Title :
Channel material optimization for the ultimate planar and nanowire mosfets: a theoretical exploration
Author :
Wang, Jing ; Lundstrom, Mark
Keywords :
Degradation; Effective mass; FETs; III-V semiconductor materials; Logic devices; MOSFETs; Modems; Quantum capacitance; Quantum cascade lasers; Tunneling;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553139
