Title :
New HEMT structures for THz applications
Author :
Cappy, A. ; Widimann, N. ; Bollaert, S. ; Wallart, X. ; Knap, W.
Author_Institution :
IEMN-DHS, Villeneuve d´´Aseq
Abstract :
THz radiations present a great interest for applications in different fields ranging from telecommunications to sensors for biology and medicine. This paper reviews two new field effect devices especially suited for THz applications: double-gate HEMTs (DG-HEMT) and plasma wave transistors
Keywords :
high electron mobility transistors; semiconductor plasma; submillimetre wave transistors; THz radiations; double-gate HEMT; field effect devices; plasma wave transistors; Cutoff frequency; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Plasma waves; Substrates; Transconductance; Wafer bonding;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553145
