DocumentCode
2701711
Title
Copper-parylene interactions in multilevel interconnection structures
Author
McDonald, J.F. ; Dabral, S. ; Yang, G.R. ; Bakhru, H. ; Lu, T.-M.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1990
fDate
12-13 Jun 1990
Firstpage
345
Lastpage
347
Abstract
Copper is investigated as an interconnect metal and parylene as the interlayer dielectric. It has been found that copper adheres to the parylene well. The effect of a soldering step has been simulated by annealing. Using Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS) it has been found that copper does indeed diffuse into the parylene at elevated temperatures. However, this diffusion is small and does not affect the dielectric leakage properties much
Keywords
Rutherford backscattering; annealing; chemical interdiffusion; copper; dielectric thin films; metallisation; secondary ion mass spectroscopy; Cu; Rutherford backscattering; annealing; dielectric leakage properties; interconnect metal; interlayer dielectric; multilevel interconnection structures; parylene; secondary ion mass spectroscopy; soldering step; Adhesives; Copper; Crystals; Dielectrics; Lead; Simulated annealing; Soldering; Stress; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location
Santa Clara, CA
Type
conf
DOI
10.1109/VMIC.1990.127892
Filename
127892
Link To Document