On-chip power supply noise measurement using Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC)

Author

Stellari, Franco ; Song, Peilin ; Sylvestri, John ; Miles, Darrell ; Forlenza, Orazio ; Forlenza, Donato

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Height, NY, USA

fYear

2009

fDate

1-6 Nov. 2009

Firstpage

1

Lastpage

10

Abstract

In this paper, a new emission-based method for measuring the amplitude of on-chip power supply noise is presented. This technique uses Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC) from CMOS gates, which are used as local probe points for the noise. In order to demonstrate the capabilities of this technique, we discuss the results obtained for two early microprocessor chips fabricated in 65 nm and 45 nm Silicon On Insulator (SOI) technologies.

Keywords

CMOS digital integrated circuits; electric noise measurement; integrated circuit design; integrated circuit noise; leakage currents; microprocessor chips; power supply circuits; silicon-on-insulator; CMOS; amplitude measurement; light emission; microprocessor chips; off-state leakage current; on-chip power supply noise measurement; silicon-on-insulator; size 45 nm; size 65 nm; time resolved emission waveform; Attenuation; Diffraction; Geology; Leakage current; Microwave propagation; Noise measurement; Nonuniform electric fields; Polarization; Power supplies; Propagation losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Conference, 2009. ITC 2009. International

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-4868-5

Electronic_ISBN

978-1-4244-4867-8

Type

conf

DOI

10.1109/TEST.2009.5355543

Filename

5355543