DocumentCode :
2701900
Title :
Design and fabrication of the spin-photodiode based on non-magnetic III-V semiconductor heterostructures
Author :
Kondo, T. ; Hayafuji, J. ; Munekata, H.
Author_Institution :
Imaging Sci. & Eng. Lab., Tokyo Inst. of Technol., Yokohama
Volume :
2
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
6
Lastpage :
7
Abstract :
In this paper, the authors propose a spin-photodiode (spin-PD) that can convert directly the magnitude of circular polarization of incident light into an electric analog signal. This novel device makes it possible to simplify the optical system based on circularly polarized light, such as the optical-chirality detection for organic compounds and stress detection in the solid objects. We show experimentally the device characteristics of III-V-based spin-PD, and discuss that the spin-PD operates as we expected from the model calculations
Keywords :
III-V semiconductors; chirality; electron spin polarisation; photodiodes; III-V semiconductors; circular polarization; electric analog signal; optical-chirality detection; spin-photodiodes; Diodes; Electrons; Fabrication; III-V semiconductor materials; Object detection; Optical devices; Optical polarization; P-n junctions; Photoconductivity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553158
Filename :
1553158
Link To Document :
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