Title :
Low internal loss GaInNAs laser diode with InGaAs/GaNAs/GaAs barrier
Author :
Maskuriy, F. ; Alias, M.S. ; Mitani, S.M. ; Manaf, A.A.
Author_Institution :
Microelectron. & Nanotechnol., Telekom Res. & Dev, TM Innovation Centre, Cyberjaya, Malaysia
Abstract :
We investigate the performance of GaInNAs broad area laser diode at room temperature when the InGaAs and GaNAs barrier configuration is applied to the quantum well system in the active region. The simulation software PICS3D is used in this work. By plotting the light versus the current curve, we can extract the differential quantum efficiency, ηd and internal quantum efficiency, ηi for the laser. The internal loss of the laser is then determined by plotting the slope of the linear fit line to the inverse of external differential quantum efficiency versus cavity length data points. The inverse slope of the efficiency versus cavity length plot shows that the laser exhibits low internal loss of 2.8cm-1 with ηi of 58%. This shows good simulation result of GaInNAs laser diode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical losses; physics computing; quantum well lasers; wide band gap semiconductors; GaInNAs-InGaAs-GaNAs-GaAs; PICS3D software; barrier configuration; broad area laser diode; cavity length; current curve; differential quantum efficiency; inverse slope efficiency; low internal loss laser diode; quantum well system; temperature 293 K to 298 K; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Laser applications; Laser beams; Nitrogen; Semiconductor lasers; GaInNAs; long wavelength lasers; quantum well;
Conference_Titel :
Photonics (ICP), 2011 IEEE 2nd International Conference on
Conference_Location :
Kata Kinabalu
Print_ISBN :
978-1-61284-265-3
Electronic_ISBN :
978-1-61284-263-9
DOI :
10.1109/ICP.2011.6106823
