Title :
Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz fT and 184 GHz fmax
Author :
Higashiwaki, M. ; Matsui, T. ; Mimura, T.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
Abstract :
In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; high electron mobility transistors; passivation; silicon compounds; wide band gap semiconductors; 163 GHz; 184 GHz; 60 nm; AlGaN-GaN; Cat-CVD SiN insulated-gate AlGaN/GaN HFET; EB lithography; SiN; high-Al-composition barrier layers; passivation layers; Aluminum gallium nitride; Gallium nitride; Gold; HEMTs; Insulation; Intrusion detection; Lithography; MODFETs; Passivation; Silicon compounds;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553161
