Title :
Evaluation of through-silicon-via process using scanning laser beam induced current (SLBIC) system
Author :
Woon Choi ; Ishimoto, Takahiro ; Tomokage, Hajime
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka, Japan
Abstract :
The manufacturing process of through-silicon-via (TSV) for 3D integration is complicated, and the high yield for each process is required. The relationship between the depth of the barrier/seed layer and the electroplating copper fill is investigated by using the scanning laser beam induced current (SLBIC) method. After reactive etching of via holes with diameters ranging from 50 μm to 150 μm, copper seed layer is deposited by sputtering, and then the electroplating of copper is performed. From the back surface of the sample, the infrared laser beam with wavelength of 1064nm was scanned, and the induced current between copper layer and silicon back surface is measured in order to obtain the current image. By changing the focus point of laser beam, the location of TSV failure is analyzed in depth direction.
Keywords :
OBIC; copper; electroplating; integrated circuit packaging; integrated circuit testing; silicon; sputter deposition; sputter etching; vias; 3D integration; Cu; SLBIC system; Si; TSV failure; copper electroplating; copper layer; copper seed layer; electroplating copper fill; infrared laser beam; reactive etching; scanning laser beam induced current system; silicon back surface; size 50 mum to 150 mum; sputter deposition; through-silicon-via process; via holes; wavelength 1064 nm; Brightness; Copper; Laser beams; Measurement by laser beam; Optical surface waves; Silicon; Surface emitting lasers; failure analysis; laser beam induced current; through silicon via;
Conference_Titel :
Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-4-9040-9012-1
DOI :
10.1109/ICEP-IAAC.2015.7111024
