Thermal resistance comparison of high power infrared emitter

This paper focuses on thermal characterization of high power infrared (IR) emitter. Thermal transient method is used to measure the junction temperature and calculate the thermal resistance (R_th). The emphasis is placed upon the investigation of thermal resistance value of units from different production lots at room temperature (25°C ± 0.5°C) for a limited range of input current (500mA, 800mA and 1A) with the air velocity kept constant throughout the experiment All investigations are based on the transient junction temperature measurements performed during the cooling process. The presented results include the cumulative structure functions and differential structure functions. It was found that the thermal resistance value of each unit differs from each other but the differences are minimal, proving the units are very consistent.