Thermal characterization of a high power infrared emitter as a function of input current

Author

Ching, Chin-Peng ; Devarajan, Mutharasu ; Liew, Wei-Ching

Author_Institution

Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

1

Lastpage

5

Abstract

In this paper, thermal characterization of a high power infrared emitter as a function of input current is reported. Thermal behavior of the high power infrared emitter is investigated by employing thermal transient method. For measurement, input current is varied from 0.2A to 1.0A at constant ambient temperature of 27°C under still-air environment. It is found that junction-to-interface thermal resistance, Rth_JI of the high power infrared emitter increases from 2.50 KfW to 3.17 K/W with the increase of input current from 0.2A to 1.0A at an ambient temperature of 27°C. From the findings, increase of junction-to-interface thermal resistance, Rth_JI for the high power infrared emitter as a function of input current is due to the variation of optical efficiency with input current as presented in this paper.

Keywords

infrared sources; light emitting diodes; thermal resistance; current 0.2 A to 1.0 A; high power infrared emitter; input current; junction-to-interface thermal resistance; temperature 27 degC; thermal characterization; thermal transient method; Calibration; Compounds; Educational institutions; Equations; Heating; Stimulated emission; Thermal characterization; high power infrared emitter; input current; junction-to-interface thermal resistance; structure functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2011 IEEE 2nd International Conference on

Conference_Location

Kata Kinabalu

Print_ISBN

978-1-61284-265-3

Electronic_ISBN

978-1-61284-263-9

Type

conf

DOI

10.1109/ICP.2011.6106848

Filename

6106848