Title :
Characterization of 28Si+ implantation induced damage in SIMOX
Author :
Knudsen, John F. ; Adams, Pad M. ; Bowman, Robert C., Jr. ; Smith, Duane D. ; Moss, Steven C.
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Summary form only given. Damage induced by ion implantation in SIMOX (separation by implantation of oxygen) wafers is measured and compared with similar implants in bulk Si. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering data show that the implant amorphization threshold is >1E14 and <3E14. Damage induced by a 1E14 implant in SIMOX material can be removed by annealing. However, damage produced by a 3E14 implant is unlikely to be removed by annealing for lack of a seed. Devices relying on ion implantation to modify SIMOX characteristics must take these amorphization effects into consideration
Keywords :
Raman spectra of inorganic solids; Rutherford backscattering; X-ray diffraction examination of materials; annealing; elemental semiconductors; ion beam effects; ion implantation; reflectivity; silicon; time resolved spectra; Raman spectroscopy; Rutherford backscattering; SIMOX wafers; Si:O, Si; X-ray diffraction; annealing; implant amorphization threshold; ion implantation; photoreflectance; radiation damage; semiconductor; separation by implantation of O; time resolved spectroscopy; Implants; Laser excitation; Optical pulses; Pulse measurements; Pump lasers; Raman scattering; Reflectivity; Tensile strain; X-ray diffraction; X-ray scattering;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69823
