Title :
Electromigration resistance of TiN-layered Ti-doped Al interconnects
Author :
Atakov, Eugenia M.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
The electromigration performance of 2-μm-wide, 17-mm-long single-layer and TiN-layered Al interconnects was studied. Al-1%Si-0.15%Ti and Al-0.15%Ti-based films were sputter deposited at 200-300°C and 475°C substrate temperatures, respectively. The interconnect lifetime improved dramatically when Al-0.15% Ti alloy was used instead of Al-1%Si-0.15%Ti. A TiN underlayer reduced the Al alloy EM resistance, except when the TiN was exposed to air prior to Al deposition
Keywords :
aluminium alloys; circuit reliability; electromigration; integrated circuit technology; metallisation; sputtered coatings; titanium alloys; titanium compounds; 200 to 300 degC; 475 degC; AlSiTi; TiN-AlTi; TiN-layered Al interconnects; VLSI; interconnect lifetime; substrate temperatures; Condition monitoring; Current density; Degradation; Electromigration; Laminates; Packaging; Stress; Temperature; Testing; Tin alloys;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1990.127897
