Title :
Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films
Author :
Bukowski, T.J. ; Alexander, T.P. ; Uhlmann, D.R. ; Teowee, G. ; McCarthy, K.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550°C to 700°C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400°C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3 O12 films were obtained when fired at 600°C which exhibited a dielectric constant of 225
Keywords :
bismuth compounds; ferroelectric thin films; permittivity; sol-gel processing; 550 to 700 C; Bi4Ti3O12; Bi4Ti3O12 thin film; dielectric constant; ferroelectric properties; firing; platinized Si wafer; precursor solution; sol-gel preparation; spin coating; Bismuth; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Optical films; Optical filters; Optical polarization; Sputtering; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598049
