Title :
Hybrid simulation and sensitivity analysis for advanced bipolar device design and process development
Author :
Voorde, Paul Vande ; Pettengill, Don ; Oh, Soo-Young
Author_Institution :
Hewlett-Packard Corp., Palo Alto, CA, USA
Abstract :
A methodology for using SUPREM, PISCES, and SPICE to simulate the AC characteristics of advanced bipolar devices is described. Accurate predictions for fT and fMAX to process variations are calculated. These techniques can be used to study the sensitivity of device performance to variations in the device structure or doping profiles. Analysis of charge storage in the device structure using PISCES yields estimates for the various delay components. The impact ionization models in PISCES can be used to estimate the breakdown properties of a given device structure or doping profile
Keywords :
bipolar integrated circuits; bipolar transistors; delays; doping profiles; electronic engineering computing; impact ionisation; semiconductor device models; sensitivity analysis; AC characteristics simulation; PISCES; SPICE; SUPREM; advanced bipolar devices; breakdown properties; charge storage; cutoff frequency; delay components; doping profiles; hybrid simulation; impact ionization models; maximum frequency of oscillation; process development; sensitivity analysis; Analytical models; Circuit optimization; Circuit simulation; Electric variables; Poisson equations; Process design; SPICE; Sensitivity analysis; Telephony; Thickness measurement;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171140
