DocumentCode :
2703233
Title :
Nonvolatile Memory Based On Reversible Phase Transition In Chalcogenide Semiconductor Thin Film
Author :
Nakayama, Kazuya ; Kitagawa, Toshiya ; Hashimoto, Kazunari ; Ohtuka, Keisuke ; Kitagawa, Akio ; Suzuki, Masakuni
fYear :
1993
fDate :
9-11 Jun 1993
Firstpage :
93
Lastpage :
96
Keywords :
Amorphous semiconductors; Buffer layers; Crystalline materials; Crystallization; Electric resistance; Electrodes; Nonvolatile memory; Semiconductor films; Semiconductor thin films; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1993., Proceedings of 1993 Japan International
Print_ISBN :
0-7803-1432-8
Type :
conf
DOI :
10.1109/IEMT.1993.639363
Filename :
639363
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2703233
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