Title :
A new accurate method for semiconductor device modelling
Author_Institution :
Dept. of Electr. Eng., Tech. Univ., Munich, West Germany
Abstract :
A method for the numerical modeling of semiconductor devices is presented. The method is based on the classical Fourier approach. Discretization of the differential equations is achieved through trigonometric-series expansions in a Galerkin procedure. The use of fast Fourier transform techniques renders the algorithm computationally effective. The Fourier method assures infinite-order accurate solutions of the strongly nonlinear semiconductor equations. Excellent numerical conditioning and high efficiency of the method offer major advantages for simulation of complex nonlinear VLSI devices, where high accuracy, numerical stability and flexibility are of major concern. Properties of the method are demonstrated on application examples
Keywords :
fast Fourier transforms; nonlinear differential equations; semiconductor device models; FFT based method; Galerkin procedure; complex nonlinear VLSI devices; differential equations; fast Fourier transform; infinite-order accurate solutions; nonlinear semiconductor equations; numerical modeling; numerical stability; semiconductor device modelling; trigonometric-series expansions; Computational modeling; Conductors; Degradation; Differential equations; Fast Fourier transforms; Integrated circuit modeling; Nonlinear equations; Numerical models; Numerical stability; Semiconductor devices;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68595