• DocumentCode
    2703561
  • Title

    A new BiCMOS gate array cell with diode connected bipolar driver

  • Author

    Horiuchi, Tadahiko ; Sakai, Lsami ; Yamazaki, Kouji ; Kudoh, Osamu ; Okumura, Kouichiro

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • fYear
    1990
  • fDate
    17-18 Sep 1990
  • Firstpage
    124
  • Lastpage
    127
  • Abstract
    A novel BiCMOS gate array cell which has high CMOS compatibility is proposed. The BiCMOS gate is composed of a diode connected bipolar driver and a CMOS function unit fully compatible with the original CMOS gate which is converted to the BiCMOS gate. A BiCMOS device is merged with a TiSi2 Schottky barrier diode which controls the current flow in a bipolar driver during a switching transition. The proposed BiCMOS gate has circuit stability against the hot carrier effect of the bipolar transistor
  • Keywords
    BIMOS integrated circuits; integrated circuit technology; integrated logic circuits; logic arrays; BiCMOS gate array cell; CMOS function unit; Schottky barrier diode; TiSi2; circuit stability; diode connected bipolar driver; high CMOS compatibility; hot carrier stability; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit stability; Driver circuits; Hot carrier effects; Logic circuits; MOSFET circuits; Schottky barriers; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
  • Conference_Location
    Minneapolis, MN
  • Type

    conf

  • DOI
    10.1109/BIPOL.1990.171143
  • Filename
    171143
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2703561