Title :
A new BiCMOS gate array cell with diode connected bipolar driver
Author :
Horiuchi, Tadahiko ; Sakai, Lsami ; Yamazaki, Kouji ; Kudoh, Osamu ; Okumura, Kouichiro
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A novel BiCMOS gate array cell which has high CMOS compatibility is proposed. The BiCMOS gate is composed of a diode connected bipolar driver and a CMOS function unit fully compatible with the original CMOS gate which is converted to the BiCMOS gate. A BiCMOS device is merged with a TiSi2 Schottky barrier diode which controls the current flow in a bipolar driver during a switching transition. The proposed BiCMOS gate has circuit stability against the hot carrier effect of the bipolar transistor
Keywords :
BIMOS integrated circuits; integrated circuit technology; integrated logic circuits; logic arrays; BiCMOS gate array cell; CMOS function unit; Schottky barrier diode; TiSi2; circuit stability; diode connected bipolar driver; high CMOS compatibility; hot carrier stability; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit stability; Driver circuits; Hot carrier effects; Logic circuits; MOSFET circuits; Schottky barriers; Schottky diodes;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1990.171143
